smd type transistors 2SD1622 features adoption of fbet process.. very small size making it easy to provide highdensity hybrid ic? s. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5v collector current i c 1a collector current (pulse) i cp 2a p c 500 mw p c *1.3 w junction temperature t j 150 storage temperature t stg -55to+150 * mounted on ceramic board(250mm2x0.8mm) collector dissipation smd type transistors product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb =50v,i e =0 100 na emitter cutoff current i ebo v eb =4v,i c =0 100 na dc current gain h fe v ce =2v,i c = 100 ma 100 560 gain bandwidth product f t v ce =10v,i c = 50 ma 150 mhz output capacitance c ob v cb = 10 v , f = 1.0mhz 8.5 pf collector-emitter saturation voltage v ce(sat) i c =500ma,i b = 50 ma 120 300 mv base-emitter saturation voltage v be(sat) i c =500ma,i b =50ma 0.9 1.2 v collector-base breakdown voltage v (br)cbo i c =10a,i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c =1ma,r be = 50 v emitter-base breakdown voltage v (br)ebo i e =10a,i c =0 5 v turn-on timie ton 40 ns storage time tstg 350 ns turn-off time tf 30 ns h fe classification marking rank r s t u hfe 100 200 140 280 200 400 280 560 de smd type transistors 2SD1622 smd type transistors product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123
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